Reference Only

IXBT6N170

IGBTs 12 Amps 1700V 3.6 Rds

Manufacturer:

Mfr Part:
IXBT6N170

TTI Part:
IXBT6N170

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryIGBTs
TechnologySi
Package / CaseD3PAK-3 (TO-268-3)
Mounting StyleSMD/SMT
ConfigurationSingle
Collector- Emitter Voltage VCEO Max1.7 kV
Collector-Emitter Saturation Voltage3.4 V
Maximum Gate Emitter Voltage- 20 V, 20 V
Continuous Collector Current at 25 C12 A
Pd - Power Dissipation75 W
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
SeriesIXBT6N170
PackagingTube
Continuous Collector Current Ic Max36 A
Gate-Emitter Leakage Current100 nA
Product TypeIGBT Transistors
SubcategoryIGBTs
TradenameBIMOSFET

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCYes
REACH Substance NameLead (7439-92-1);Dechlorane plus; Dechlorane+; 1,6,7,8,9,14,15,16,17,17,18,18-dodecachloropentacyclo

Documents

EDA / CAD Models

0In Stock

Available For Backorder
Lead Time: 69 Weeks
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Quantity Unit PriceExt. Price
9,22 €276,60 €
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NCNR - Cannot be cancelled or returned.

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