Reference Only

IXFA130N10T2

MOSFETs Trench T2 HiperFET Power MOSFET

Manufacturer:

Mfr Part:
IXFA130N10T2

TTI Part:
IXFA130N10T2

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseTO-263-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage100 V
Id - Continuous Drain Current130 A
Rds On - Drain-Source Resistance9.1 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage4.5 V
Qg - Gate Charge130 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation360 W
Channel ModeEnhancement
TradenameHiPerFET
PackagingTube
ConfigurationSingle
Fall Time25 ns
Forward Transconductance - Min45 S
Product TypeMOSFETs
Rise Time38 ns
SeriesIXFA130N10
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time24 ns
Typical Turn-On Delay Time16 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCYes
REACH Substance NameDechlorane plus; Dechlorane+; 1,6,7,8,9,14,15,16,17,17,18,18-dodecachloropentacyclo[12.2.1.16,9.02,1

Documents

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2,80 €840,00 €
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NCNR - Cannot be cancelled or returned.

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