Reference Only

IXFB110N60P3

MOSFETs 600V 110A 0.056Ohm PolarP3 Power MOSFET

Manufacturer:

Mfr Part:
IXFB110N60P3

TTI Part:
IXFB110N60P3

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CasePLUS-264-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage600 V
Id - Continuous Drain Current110 A
Rds On - Drain-Source Resistance56 mOhms
Vgs - Gate-Source Voltage- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage5 V
Qg - Gate Charge245 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation1.89 kW
Channel ModeEnhancement
TradenameHiPerFET
PackagingTube
ConfigurationSingle
Fall Time11 ns
Forward Transconductance - Min105 S, 65 S
Product TypeMOSFETs
Rise Time19 ns
SeriesIXFB110N60
SubcategoryTransistors
Transistor Type1 N-Channel

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCYes
REACH Substance NameLead (7439-92-1);Dechlorane plus; Dechlorane+; 1,6,7,8,9,14,15,16,17,17,18,18-dodecachloropentacyclo

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EDA / CAD Models

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NCNR - Cannot be cancelled or returned.

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