Reference Only

IXFH15N100Q3

MOSFETs Q3Class HiPerFET Pwr MOSFET 1000V/15A

Manufacturer:

Mfr Part:
IXFH15N100Q3

TTI Part:
IXFH15N100Q3

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-247-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage1 kV
Id - Continuous Drain Current15 A
Rds On - Drain-Source Resistance1.05 Ohms
Vgs - Gate-Source Voltage- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage6.5 V
Qg - Gate Charge64 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation690 W
Channel ModeEnhancement
TradenameHiPerFET
PackagingTube
ConfigurationSingle
Product TypeMOSFETs
Rise Time250 ns
SeriesIXFH15N100
SubcategoryTransistors
Transistor Type1 N-Channel

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

60In Stock

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(Minimum: 30 / Multiples: 30)
Quantity Unit PriceExt. Price
10,88 €326,40 €
10,76 €645,60 €
10,65 €1.278,00 €
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NCNR - Cannot be cancelled or returned.

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