Reference Only

IXFH26N50P

MOSFETs HiPERFET Id26 BVdass500

Manufacturer:

Mfr Part:
IXFH26N50P

TTI Part:
IXFH26N50P

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-247-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage500 V
Id - Continuous Drain Current26 A
Rds On - Drain-Source Resistance230 mOhms
Vgs - Gate-Source Voltage- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage3 V
Qg - Gate Charge60 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation400 W
Channel ModeEnhancement
TradenameHiPerFET
PackagingTube
ConfigurationSingle
Fall Time20 ns
Forward Transconductance - Min26 S
Product TypeMOSFETs
Rise Time25 ns
SeriesHiPerFET
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time58 ns
Typical Turn-On Delay Time20 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

Documents

EDA / CAD Models

0In Stock

150
On Order
150 expected 10-Feb-27
Please adjust quantity to minimum and multiple values.
Quantity
---
Unit Price
---
Ext. Price
---

Tube

(Minimum: 300 / Multiples: 30)
Quantity Unit PriceExt. Price
4,81 €1.443,00 €
Need more?
NCNR - Cannot be cancelled or returned.

My Notes

Sign into see notes.