Reference Only

IXFK180N10

MOSFETs 100V 180A

Manufacturer:

Mfr Part:
IXFK180N10

TTI Part:
IXFK180N10

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-264-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage100 V
Id - Continuous Drain Current180 A
Rds On - Drain-Source Resistance8 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage2 V
Qg - Gate Charge390 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation560 W
Channel ModeEnhancement
TradenameHiPerFET
PackagingTube
ConfigurationSingle
Fall Time65 ns
Forward Transconductance - Min90 S
Product TypeMOSFETs
Rise Time90 ns
SeriesHiPerFET
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time140 ns
Typical Turn-On Delay Time50 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

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