Reference Only

IXFK200N10P

MOSFETs 200 Amps 100V 0.0075 Rds

Manufacturer:

Mfr Part:
IXFK200N10P

TTI Part:
IXFK200N10P

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-264-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage100 V
Id - Continuous Drain Current200 A
Rds On - Drain-Source Resistance7.5 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage5 V
Qg - Gate Charge235 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation830 W
Channel ModeEnhancement
TradenameHiPerFET
PackagingTube
ConfigurationSingle
Fall Time90 ns
Forward Transconductance - Min60 S
Product TypeMOSFETs
Rise Time35 ns
SeriesIXFK200N10
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time150 ns
Typical Turn-On Delay Time30 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541500000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

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11,34 €3.402,00 €
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NCNR - Cannot be cancelled or returned.

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