Reference Only

IXFL38N100P

MOSFETs 38 Amps 1000V 0.21 Rds

Manufacturer:

Mfr Part:
IXFL38N100P

TTI Part:
IXFL38N100P

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-264-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage1 kV
Id - Continuous Drain Current29 A
Rds On - Drain-Source Resistance230 mOhms
Vgs - Gate-Source Voltage- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage3.5 V
Qg - Gate Charge350 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation520 W
Channel ModeEnhancement
TradenameHiPerFET
PackagingTube
ConfigurationSingle
Fall Time40 ns
Product TypeMOSFETs
Rise Time55 ns
SeriesIXFL38N100
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time71 ns
Typical Turn-On Delay Time74 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541500000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

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