Reference Only

IXFN102N30P

MOSFET Modules 102 Amps 300V 0.033 Rds

Manufacturer:

Mfr Part:
IXFN102N30P

TTI Part:
IXFN102N30P

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFET Modules
TechnologySi
Mounting StyleScrew Mount
Package / CaseSOT-227-4
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage300 V
Id - Continuous Drain Current86 A
Rds On - Drain-Source Resistance33 mOhms
Vgs - Gate-Source Voltage- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage5 V
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation570 W
SeriesIXFN102N30
PackagingTube
ConfigurationSingle
Fall Time30 ns
Height12.22 mm
Length38.23 mm
Product TypeMOSFET Modules
Rise Time28 ns
SubcategoryDiscrete and Power Modules
TradenameHiPerFET
TypePolarHV HiPerFET Power MOSFET
Typical Turn-Off Delay Time130 ns
Typical Turn-On Delay Time30 ns
Width25.42 mm

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541500000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

0In Stock

Available For Backorder
Lead Time: 30 Weeks
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(Minimum: 300 / Multiples: 10)
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18,83 €5.649,00 €
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NCNR - Cannot be cancelled or returned.

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