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IXFN20N120P

MOSFET Modules 20 Amps 1200V 0.6 Rds

Manufacturer:

Mfr Part:
IXFN20N120P

TTI Part:
IXFN20N120P

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFET Modules
TechnologySi
Mounting StyleScrew Mount
Package / CaseSOT-227-4
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage1.2 kV
Id - Continuous Drain Current20 A
Rds On - Drain-Source Resistance570 mOhms
Vgs - Gate-Source Voltage- 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage6.5 V
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation595 W
SeriesIXFN20N120
PackagingTube
ConfigurationSingle
Fall Time70 ns
Height12.22 mm
Length38.23 mm
Product TypeMOSFET Modules
Rise Time45 ns
SubcategoryDiscrete and Power Modules
TradenameHiPerFET
TypePolar Power MOSFET HiPerFET
Typical Turn-Off Delay Time72 ns
Typical Turn-On Delay Time49 ns
Width25.42 mm

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

Documents

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0In Stock

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Lead Time: 35 Weeks
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35,96 €10.788,00 €
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NCNR - Cannot be cancelled or returned.

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