Reference Only

IXFN210N20P

MOSFET Modules 188 Amps 200V 0.0105 Rds

Manufacturer:

Mfr Part:
IXFN210N20P

TTI Part:
IXFN210N20P

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFET Modules
TechnologySi
Mounting StyleScrew Mount
Package / CaseSOT-227-4
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage200 V
Id - Continuous Drain Current188 A
Rds On - Drain-Source Resistance10.5 mOhms
Vgs - Gate-Source Voltage- 20 V, + 20 V
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation1.07 kW
SeriesHiPerFET
PackagingTube
ConfigurationSingle
Product TypeMOSFET Modules
SubcategoryDiscrete and Power Modules
TradenameHiPerFET
TypeHiperFET

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

0In Stock

Available For Backorder
Lead Time: 33 Weeks
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(Minimum: 300 / Multiples: 10)
Quantity Unit PriceExt. Price
30,84 €9.252,00 €
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NCNR - Cannot be cancelled or returned.

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