Reference Only

IXFN300N10P

MOSFET Modules Polar Power MOSFET HiPerFET

Manufacturer:

Mfr Part:
IXFN300N10P

TTI Part:
IXFN300N10P

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFET Modules
TechnologySi
Mounting StyleScrew Mount
Package / CaseSOT-227-4
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage100 V
Id - Continuous Drain Current295 A
Rds On - Drain-Source Resistance5.5 mOhms
Vgs - Gate-Source Voltage- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage5 V
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation1.07 kW
SeriesIXFN300N10
PackagingTube
ConfigurationSingle
Fall Time25 ns
Height12.22 mm
Length38.23 mm
Product TypeMOSFET Modules
Rise Time35 ns
SubcategoryDiscrete and Power Modules
TradenameHiPerFET
TypePolar Power MOSFET HiPerFET
Typical Turn-Off Delay Time56 ns
Typical Turn-On Delay Time36 ns
Width25.42 mm

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541900000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

0In Stock

Available For Backorder
Lead Time: 29 Weeks
Please adjust quantity to minimum and multiple values.
Quantity
---
Unit Price
---
Ext. Price
---

Tube

(Minimum: 300 / Multiples: 10)
Quantity Unit PriceExt. Price
33,82 €10.146,00 €
Need more?
NCNR - Cannot be cancelled or returned.

My Notes

Sign into see notes.