Reference Only

IXFN32N100Q3

MOSFET Modules Q3Class HiPerFET Pwr MOSFET 1000V/28A

Manufacturer:

Mfr Part:
IXFN32N100Q3

TTI Part:
IXFN32N100Q3

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFET Modules
TechnologySi
Mounting StyleScrew Mount
Package / CaseSOT-227-4
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage1 kV
Id - Continuous Drain Current28 A
Rds On - Drain-Source Resistance320 mOhms
Vgs - Gate-Source Voltage- 30 V, + 30 V
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation780 W
SeriesIXFN32N1003
PackagingTube
ConfigurationSingle
Product TypeMOSFET Modules
Rise Time300 ns
SubcategoryDiscrete and Power Modules
TradenameHiPerFET
TypeHiperFET

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

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Lead Time: 30 Weeks
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47,81 €478,10 €
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NCNR - Cannot be cancelled or returned.

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