Reference Only

IXFN80N50P

MOSFET Modules 500V 66A

Manufacturer:

Mfr Part:
IXFN80N50P

TTI Part:
IXFN80N50P

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFET Modules
TechnologySi
Mounting StyleScrew Mount
Package / CaseSOT-227-4
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage500 V
Id - Continuous Drain Current66 A
Rds On - Drain-Source Resistance65 mOhms
Vgs - Gate-Source Voltage- 30 V, + 30 V
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation700 W
SeriesHiPerFET
PackagingTube
ConfigurationSingle
Fall Time18 ns
Height9.6 mm
Length38.2 mm
Product TypeMOSFET Modules
Rise Time27 ns
SubcategoryDiscrete and Power Modules
TradenameHiPerFET
TypeHiperFET
Typical Turn-Off Delay Time70 ns
Typical Turn-On Delay Time25 ns
Width25.07 mm

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541100000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

0In Stock

Available For Backorder
Lead Time: 30 Weeks
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(Minimum: 300 / Multiples: 10)
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23,54 €7.062,00 €
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NCNR - Cannot be cancelled or returned.

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