Reference Only

IXFN80N50Q3

MOSFET Modules Q3Class HiPerFET Pwr MOSFET 500V/63A

Manufacturer:

Mfr Part:
IXFN80N50Q3

TTI Part:
IXFN80N50Q3

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFET Modules
TechnologySi
Mounting StyleScrew Mount
Package / CaseSOT-227-4
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage500 V
Id - Continuous Drain Current63 A
Rds On - Drain-Source Resistance65 mOhms
Vgs - Gate-Source Voltage- 30 V, + 30 V
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation780 W
SeriesHiPerFET
PackagingTube
ConfigurationSingle
Product TypeMOSFET Modules
Rise Time250 ns
SubcategoryDiscrete and Power Modules
TradenameHiPerFET

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

0In Stock

Available For Backorder
Lead Time: 29 Weeks
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(Minimum: 300 / Multiples: 10)
Quantity Unit PriceExt. Price
37,84 €11.352,00 €
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NCNR - Cannot be cancelled or returned.

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