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IXFN80N60P3

MOSFET Modules Polar3 HiPerFET Power MOSFET

Manufacturer:

Mfr Part:
IXFN80N60P3

TTI Part:
IXFN80N60P3

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFET Modules
TechnologySi
Mounting StyleScrew Mount
Package / CaseSOT-227-4
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage600 V
Id - Continuous Drain Current66 A
Rds On - Drain-Source Resistance70 mOhms
Vgs - Gate-Source Voltage- 30 V, + 30 V
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation960 W
SeriesIXFN80N60
PackagingTube
ConfigurationSingle
Product TypeMOSFET Modules
SubcategoryDiscrete and Power Modules
TradenameHiPerFET
TypeHiperFET

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

0In Stock

Available For Backorder
Lead Time: 29 Weeks
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24,72 €7.416,00 €
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NCNR - Cannot be cancelled or returned.

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