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IXFN82N60Q3

MOSFET Modules Q3Class HiPerFET Pwr MOSFET 600V/66A

Manufacturer:

Mfr Part:
IXFN82N60Q3

TTI Part:
IXFN82N60Q3

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFET Modules
TechnologySi
Mounting StyleScrew Mount
Package / CaseSOT-227-4
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage600 V
Id - Continuous Drain Current66 A
Rds On - Drain-Source Resistance75 mOhms
Vgs - Gate-Source Voltage- 30 V, + 30 V
Pd - Power Dissipation960 W
SeriesIXFN82N60
PackagingTube
ConfigurationSingle
Product TypeMOSFET Modules
Rise Time300 ns
SubcategoryDiscrete and Power Modules
TradenameHiPerFET

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

0In Stock

Available For Backorder
Lead Time: 30 Weeks
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Tube

(Minimum: 300 / Multiples: 10)
Quantity Unit PriceExt. Price
45,35 €13.605,00 €
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NCNR - Cannot be cancelled or returned.

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