Reference Only

IXFT320N10T2

MOSFETs Trench T2 HiperFET Power MOSFET

Manufacturer:

Mfr Part:
IXFT320N10T2

TTI Part:
IXFT320N10T2

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseD3PAK-3 (TO-268-3)
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage100 V
Id - Continuous Drain Current320 A
Rds On - Drain-Source Resistance3.5 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage4 V
Qg - Gate Charge430 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation1 kW
Channel ModeEnhancement
TradenameHiPerFET
PackagingTube
ConfigurationSingle
Fall Time73 ns
Forward Transconductance - Min80 S
Product TypeMOSFETs
Rise Time46 ns
SeriesIXFT320N10
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time73 ns
Typical Turn-On Delay Time36 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541500000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCYes
REACH Substance NameLead

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