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IXFT36N60P

MOSFETs 600V 36A

Manufacturer:

Mfr Part:
IXFT36N60P

TTI Part:
IXFT36N60P

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseD3PAK-3 (TO-268-3)
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage600 V
Id - Continuous Drain Current36 A
Rds On - Drain-Source Resistance190 mOhms
Vgs - Gate-Source Voltage- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage5 V
Qg - Gate Charge102 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation650 W
Channel ModeEnhancement
TradenameHiPerFET
PackagingTube
ConfigurationSingle
Fall Time22 ns
Forward Transconductance - Min25 S
Product TypeMOSFETs
Rise Time25 ns
SeriesIXFT36N60
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time80 ns
Typical Turn-On Delay Time30 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541500000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCYes
REACH Substance NameLead

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