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IXFT88N30P

MOSFETs POLAR HIPERFET WITH REDUCED RDS 300V 88A

Manufacturer:

Mfr Part:
IXFT88N30P

TTI Part:
IXFT88N30P

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseD3PAK-3 (TO-268-3)
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage300 V
Id - Continuous Drain Current88 A
Rds On - Drain-Source Resistance40 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage5 V
Qg - Gate Charge180 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation600 W
Channel ModeEnhancement
TradenameHiPerFET
PackagingTube
ConfigurationSingle
Fall Time25 ns
Forward Transconductance - Min40 S
Product TypeMOSFETs
Rise Time24 ns
SeriesIXFT88N30
SubcategoryTransistors
Typical Turn-Off Delay Time96 ns
Typical Turn-On Delay Time25 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541500000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCYes
REACH Substance NameLead

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EDA / CAD Models

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