Reference Only

IXFT96N20P

MOSFETs 96 Amps 200V 0.024 Rds

Manufacturer:

Mfr Part:
IXFT96N20P

TTI Part:
IXFT96N20P

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseD3PAK-3 (TO-268-3)
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage200 V
Id - Continuous Drain Current96 A
Rds On - Drain-Source Resistance24 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage5 V
Qg - Gate Charge145 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation600 W
Channel ModeEnhancement
TradenameHiPerFET
PackagingTube
ConfigurationSingle
Fall Time30 ns
Forward Transconductance - Min40 S
Product TypeMOSFETs
Rise Time30 ns
SeriesIXFT96N20
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time75 ns
Typical Turn-On Delay Time28 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

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6,84 €2.052,00 €
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NCNR - Cannot be cancelled or returned.

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