Reference Only

IXSA40N120L2-7TR

New Product
SiC MOSFETs 1200V 80mohm (40A a. 25C) SiC MOSFET in TO267-7L

Manufacturer:

Mfr Part:
IXSA40N120L2-7TR

TTI Part:
IXSA40N120L2-7TR

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategorySiC MOSFETs
Mounting StyleSMD/SMT
Package / CaseTO-263-7L
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage1.2 kV
Id - Continuous Drain Current41 A
Rds On - Drain-Source Resistance104 mOhms
Vgs - Gate-Source Voltage- 5 V, + 20 V
Vgs th - Gate-Source Threshold Voltage4.5 V
Qg - Gate Charge53 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation250 W
Channel ModeEnhancement
ConfigurationSingle
Fall Time9.5 ns
PackagingReel
Product TypeSiC MOSFETS
ProductMOSFETs
Rise Time14.4 ns
SeriesIXSA40N120L2-7
SubcategoryTransistors
TechnologySiC
Transistor Type1 N-Channel
TypeSiC MOSFET
Typical Turn-Off Delay Time11.5 ns
Typical Turn-On Delay Time5.6 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantRoHS Per Exemption
RoHS Per Exemption
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

800In Stock

Please adjust quantity to minimum and multiple values.
Quantity
---
Unit Price
---
Ext. Price
---

Reel

(Minimum: 800 / Multiples: 800)
Quantity Unit PriceExt. Price
3,68 €2.944,00 €
Need more?
NCNR - Cannot be cancelled or returned.

My Notes

Sign into see notes.