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IXSH80N120L2KHV

New Product
SiC MOSFETs 1200V 30mohm (80A a. 25C) SiC MOSFET in TO247-4L

Manufacturer:

Mfr Part:
IXSH80N120L2KHV

TTI Part:
IXSH80N120L2KHV

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategorySiC MOSFETs
Mounting StyleThrough Hole
Package / CaseTO-247-4L
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage1.2 kV
Id - Continuous Drain Current79 A
Rds On - Drain-Source Resistance39 mOhms
Vgs - Gate-Source Voltage- 5 V, + 20 V
Qg - Gate Charge135 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation395 W
Channel ModeEnhancement
ConfigurationSingle
Fall Time14 ns
PackagingTube
Product TypeSiC MOSFETS
ProductMOSFETs
Rise Time24.4 ns
SubcategoryTransistors
TechnologySiC
Transistor Type1 N-Channel
TypeSiC MOSFET
Typical Turn-Off Delay Time28.8 ns
Typical Turn-On Delay Time12.8 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantRoHS Per Exemption
RoHS Per Exemption
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

420In Stock

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(Minimum: 30 / Multiples: 30)
Quantity Unit PriceExt. Price
7,12 €213,60 €
7,03 €843,60 €
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NCNR - Cannot be cancelled or returned.

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