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IXSJ25N120R1

SiC MOSFETs 1200V 62mohm (25A a. 25C) SiC MOSFET in isolated TO247-3L

Manufacturer:

Mfr Part:
IXSJ25N120R1

TTI Part:
IXSJ25N120R1

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategorySiC MOSFETs
Mounting StyleThrough Hole
Package / CaseTO-247-3L
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage1.2 kV
Id - Continuous Drain Current28 A
Rds On - Drain-Source Resistance81 mOhms
Vgs - Gate-Source Voltage- 4 V, + 21 V
Vgs th - Gate-Source Threshold Voltage4.8 V
Qg - Gate Charge52 nC
Minimum Operating Temperature- 40 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation75.3 W
Channel ModeEnhancement
ConfigurationSingle
Fall Time8 ns
Forward Transconductance - Min8.3 ns
PackagingTube
Product TypeSiC MOSFETS
ProductPower MOSFETs
Rise Time20 ns
SubcategoryTransistors
TechnologySiC
Transistor Type1 N-Channel
TypePower MOSFET
Typical Turn-Off Delay Time25 ns
Typical Turn-On Delay Time10 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

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