Reference Only

IXTA06N120P

MOSFETs 0.6 Amps 1200V 32 Rds

Manufacturer:

Mfr Part:
IXTA06N120P

TTI Part:
IXTA06N120P

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseD2PAK-3 (TO-263-3)
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage1.2 kV
Id - Continuous Drain Current600 mA
Rds On - Drain-Source Resistance34 Ohms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage2 V
Qg - Gate Charge13.3 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation42 W
Channel ModeEnhancement
PackagingTube
ConfigurationSingle
Fall Time34 ns
Forward Transconductance - Min0.28 S
Product TypeMOSFETs
Rise Time37 ns
SeriesIXTA06N120
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time35 ns
Typical Turn-On Delay Time19 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCYes
REACH Substance NameLead

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