Reference Only

IXTH1N200P3

MOSFETs 2000V/1A HV Power MOSFET, TO-247

Manufacturer:

Mfr Part:
IXTH1N200P3

TTI Part:
IXTH1N200P3

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-247-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage2 kV
Id - Continuous Drain Current1 A
Rds On - Drain-Source Resistance40 Ohms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage2 V
Qg - Gate Charge23.5 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation125 W
Channel ModeEnhancement
PackagingTube
ConfigurationSingle
Fall Time80 ns
Forward Transconductance - Min400 mS
Product TypeMOSFETs
Rise Time26 ns
SeriesPolar3
SubcategoryTransistors
Typical Turn-Off Delay Time37 ns
Typical Turn-On Delay Time16 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

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