Reference Only

IXTH50P10

MOSFETs -50 Amps -100V 0.055 Rds

Manufacturer:

Mfr Part:
IXTH50P10

TTI Part:
IXTH50P10

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-247-3
Transistor PolarityP-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage100 V
Id - Continuous Drain Current50 A
Rds On - Drain-Source Resistance55 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage5 V
Qg - Gate Charge140 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation300 W
Channel ModeEnhancement
PackagingTube
ConfigurationSingle
Fall Time38 ns
Forward Transconductance - Min13 S
Product TypeMOSFETs
Rise Time39 ns
SeriesIXTH50P10
SubcategoryTransistors
Transistor Type1 P-Channel
Typical Turn-Off Delay Time86 ns
Typical Turn-On Delay Time46 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

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6,12 €1.836,00 €
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NCNR - Cannot be cancelled or returned.

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