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IXTH6N100D2

MOSFETs 6Amps 1000V

Manufacturer:

Mfr Part:
IXTH6N100D2

TTI Part:
IXTH6N100D2

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-247-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage1 kV
Id - Continuous Drain Current6 A
Rds On - Drain-Source Resistance2.2 Ohms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage2.5 V
Qg - Gate Charge95 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation300 W
Channel ModeDepletion
PackagingTube
ConfigurationSingle
Fall Time47 ns
Forward Transconductance - Min2.6 S
Product TypeMOSFETs
Rise Time80 ns
SeriesIXTH6N100
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time34 ns
Typical Turn-On Delay Time25 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

Documents

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