Reference Only

IXTH8P50

MOSFETs -8 Amps -500V 1.2 Rds

Manufacturer:

Mfr Part:
IXTH8P50

TTI Part:
IXTH8P50

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-247-3
Transistor PolarityP-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage500 V
Id - Continuous Drain Current8 A
Rds On - Drain-Source Resistance1.2 Ohms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage5 V
Qg - Gate Charge130 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation180 W
Channel ModeEnhancement
PackagingTube
ConfigurationSingle
Fall Time35 ns
Forward Transconductance - Min4 S
Product TypeMOSFETs
Rise Time27 ns
SeriesIXTH8P50
SubcategoryTransistors
Transistor Type1 P-Channel
Typical Turn-Off Delay Time35 ns
Typical Turn-On Delay Time33 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541500000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

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Lead Time: 30 Weeks
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(Minimum: 300 / Multiples: 30)
Quantity Unit PriceExt. Price
5,00 €1.500,00 €
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NCNR - Cannot be cancelled or returned.
Available Regional Inventory
300 available now at tti.com

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