Reference Only

IXTK170P10P

MOSFETs -170.0 Amps -100V 0.012 Rds

Manufacturer:

Mfr Part:
IXTK170P10P

TTI Part:
IXTK170P10P

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-264-3
Transistor PolarityP-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage100 V
Id - Continuous Drain Current170 A
Rds On - Drain-Source Resistance14 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage2 V
Qg - Gate Charge240 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation890 W
Channel ModeEnhancement
PackagingTube
ConfigurationSingle
Fall Time45 ns
Forward Transconductance - Min35 S
Product TypeMOSFETs
Rise Time75 ns
SeriesIXTK170P10
SubcategoryTransistors
Transistor Type1 P-Channel
Typical Turn-Off Delay Time82 ns
Typical Turn-On Delay Time32 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

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Lead Time: 26 Weeks
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13,80 €4.140,00 €
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NCNR - Cannot be cancelled or returned.

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