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IXTN600N04T2

MOSFET Modules GigaMOS Trench T2 HiperFET PWR MOSFET

Manufacturer:

Mfr Part:
IXTN600N04T2

TTI Part:
IXTN600N04T2

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFET Modules
TechnologySi
Mounting StyleScrew Mount
Package / CaseSOT-227B-4
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage40 V
Id - Continuous Drain Current600 A
Rds On - Drain-Source Resistance1.3 mOhms
Vgs - Gate-Source Voltage- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage3.5 V
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation940 W
SeriesIXTN600N04
PackagingTube
ConfigurationSingle
Fall Time250 ns
Output Current600 A
Product TypeMOSFET Modules
Rise Time20 ns
SubcategoryDiscrete and Power Modules
TradenameHiPerFET
TypeTrench
Typical Turn-Off Delay Time90 ns
Typical Turn-On Delay Time40 ns
Vr - Reverse Voltage20 V

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCYes
REACH Substance NameLead

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EDA / CAD Models

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Lead Time: 31 Weeks
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24,35 €7.305,00 €
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NCNR - Cannot be cancelled or returned.

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