Reference Only

IXTP02N120P

MOSFETs 500V to 1200V Polar Power MOSFET

Manufacturer:

Mfr Part:
IXTP02N120P

TTI Part:
IXTP02N120P

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-220-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage1.2 kV
Id - Continuous Drain Current200 mA
Rds On - Drain-Source Resistance60 Ohms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage4 V
Qg - Gate Charge4.7 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation33 W
Channel ModeEnhancement
PackagingTube
ConfigurationSingle
Fall Time39 ns
Forward Transconductance - Min0.12 S
Product TypeMOSFETs
Rise Time10 ns
SeriesIXTP02N120
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time21 ns
Typical Turn-On Delay Time6 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541900000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

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