Reference Only

IXTP08N100D2

MOSFETs N-CH MOSFETS 1000V 800MA

Manufacturer:

Mfr Part:
IXTP08N100D2

TTI Part:
IXTP08N100D2

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-220-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage1 kV
Id - Continuous Drain Current800 mA
Rds On - Drain-Source Resistance21 Ohms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage4 V
Qg - Gate Charge14.6 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation60 W
Channel ModeDepletion
PackagingTube
ConfigurationSingle
Fall Time48 ns
Forward Transconductance - Min330 mS
Product TypeMOSFETs
Rise Time57 ns
SeriesIXTP08N100
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time34 ns
Typical Turn-On Delay Time28 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

300In Stock

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(Minimum: 50 / Multiples: 50)
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1,41 €70,50 €
1,39 €139,00 €
1,37 €342,50 €
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NCNR - Cannot be cancelled or returned.

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