Reference Only

IXTP1N120P

MOSFETs 1 Amps 1200V 20 Rds

Manufacturer:

Mfr Part:
IXTP1N120P

TTI Part:
IXTP1N120P

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-220-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage1.2 kV
Id - Continuous Drain Current1 A
Rds On - Drain-Source Resistance20 Ohms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage4.5 V
Qg - Gate Charge17.6 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation63 W
Channel ModeEnhancement
PackagingTube
ConfigurationSingle
Fall Time27 ns
Product TypeMOSFETs
Rise Time28 ns
SeriesIXTP1N120
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time54 ns
Typical Turn-On Delay Time20 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

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2,50 €750,00 €
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