Reference Only

IXTP4N80P

MOSFETs 3.5 Amps 800V 3 Rds

Manufacturer:

Mfr Part:
IXTP4N80P

TTI Part:
IXTP4N80P

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-220-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage800 V
Id - Continuous Drain Current3.5 A
Rds On - Drain-Source Resistance3 Ohms
Vgs - Gate-Source Voltage- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage3 V
Qg - Gate Charge14.2 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation100 W
Channel ModeEnhancement
PackagingTube
ConfigurationSingle
Fall Time29 ns
Product TypeMOSFETs
Rise Time24 ns
SeriesIXTP4N80
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time60 ns
Typical Turn-On Delay Time22 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

0In Stock

Available For Backorder
Lead Time: 30 Weeks
Please adjust quantity to minimum and multiple values.
Quantity
---
Unit Price
---
Ext. Price
---

Tube

(Minimum: 300 / Multiples: 50)
Quantity Unit PriceExt. Price
1,39 €417,00 €
Need more?
NCNR - Cannot be cancelled or returned.

My Notes

Sign into see notes.