Reference Only

IXTQ22N60P

MOSFETs 22.0 Amps 600 V 0.33 Ohm Rds

Manufacturer:

Mfr Part:
IXTQ22N60P

TTI Part:
IXTQ22N60P

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-3P-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage600 V
Id - Continuous Drain Current22 A
Rds On - Drain-Source Resistance350 mOhms
Vgs - Gate-Source Voltage- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage3 V
Qg - Gate Charge62 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation400 W
Channel ModeEnhancement
PackagingTube
ConfigurationSingle
Fall Time23 ns
Forward Transconductance - Min21 S
Product TypeMOSFETs
Rise Time20 ns
SeriesIXTQ22N60
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time60 ns
Typical Turn-On Delay Time20 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

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3,81 €1.143,00 €
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