Reference Only

IXTQ26P20P

MOSFETs -26.0 Amps -200V 0.170 Rds

Manufacturer:

Mfr Part:
IXTQ26P20P

TTI Part:
IXTQ26P20P

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-3P-3
Transistor PolarityP-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage200 V
Id - Continuous Drain Current26 A
Rds On - Drain-Source Resistance170 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage4 V
Qg - Gate Charge56 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation300 W
Channel ModeEnhancement
PackagingTube
ConfigurationSingle
Fall Time21 ns
Product TypeMOSFETs
Rise Time33 ns
SeriesIXTQ26P20
SubcategoryTransistors
Transistor Type1 P-Channel
Typical Turn-Off Delay Time46 ns
Typical Turn-On Delay Time18 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

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NCNR - Cannot be cancelled or returned.

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