Reference Only

IXTQ30N60P

MOSFETs 30.0 Amps 600 V 0.24 Ohm Rds

Manufacturer:

Mfr Part:
IXTQ30N60P

TTI Part:
IXTQ30N60P

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-3P-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage600 V
Id - Continuous Drain Current30 A
Rds On - Drain-Source Resistance240 mOhms
Vgs - Gate-Source Voltage- 30 V, 30 V
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation540 W
Channel ModeEnhancement
PackagingTube
ConfigurationSingle
Fall Time25 ns
Forward Transconductance - Min25 S
Product TypeMOSFETs
Rise Time20 ns
SeriesIXTQ30N60
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time80 ns
Typical Turn-On Delay Time29 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

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Lead Time: 30 Weeks
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6,29 €1.887,00 €
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NCNR - Cannot be cancelled or returned.

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