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IXYA20N120B4HV

IGBTs DISC IGBT 1200V TO-263HV

Manufacturer:

Mfr Part:
IXYA20N120B4HV

TTI Part:
IXYA20N120B4HV

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryIGBTs
TechnologySi
Package / CaseTO-263HV-3
Mounting StyleSMD/SMT
ConfigurationSingle
Collector- Emitter Voltage VCEO Max1.2 kV
Collector-Emitter Saturation Voltage2.1 V
Maximum Gate Emitter Voltage- 20 V, 20 V
Continuous Collector Current at 25 C76 A
Pd - Power Dissipation375 W
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
SeriesTrench
PackagingTube
Continuous Collector Current Ic Max130 A
Gate-Emitter Leakage Current100 nA
Product TypeIGBT Transistors
SubcategoryIGBTs
TradenameXPT

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

200In Stock

Please adjust quantity to minimum and multiple values.
Quantity
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Unit Price
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Ext. Price
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Tube

(Minimum: 50 / Multiples: 50)
Quantity Unit PriceExt. Price
3,44 €172,00 €
3,20 €320,00 €
3,16 €790,00 €
3,12 €1.560,00 €
Need more?
NCNR - Cannot be cancelled or returned.

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