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IXYH40N65B3D1

IGBTs DISC IGBT 650V TO247AD

Manufacturer:

Mfr Part:
IXYH40N65B3D1

TTI Part:
IXYH40N65B3D1

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryIGBTs
TechnologySi
Package / CaseTO-247-3
Mounting StyleThrough Hole
ConfigurationSingle
Collector- Emitter Voltage VCEO Max650 V
Collector-Emitter Saturation Voltage1.7 V
Maximum Gate Emitter Voltage- 20 V, 20 V
Continuous Collector Current at 25 C86 A
Pd - Power Dissipation300 W
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
PackagingTube
Continuous Collector Current Ic Max195 A
Gate-Emitter Leakage Current100 nA
Product TypeIGBT Transistors
SubcategoryIGBTs

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

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