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IXYH85N120A4

IGBTs DISC IGBT 1200V TO247

Manufacturer:

Mfr Part:
IXYH85N120A4

TTI Part:
IXYH85N120A4

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryIGBTs
TechnologySi
Package / CaseTO-247-3
Mounting StyleThrough Hole
ConfigurationSingle
Collector- Emitter Voltage VCEO Max1.2 kV
Collector-Emitter Saturation Voltage1.8 V
Maximum Gate Emitter Voltage- 20 V, 20 V
Continuous Collector Current at 25 C300 A
Pd - Power Dissipation1.15 kW
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
SeriesTrench
PackagingTube
Continuous Collector Current Ic Max520 A
Gate-Emitter Leakage Current100 nA
Product TypeIGBT Transistors
SubcategoryIGBTs
TradenameXPT

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

0In Stock

Available For Backorder
Lead Time: 35 Weeks
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(Minimum: 300 / Multiples: 30)
Quantity Unit PriceExt. Price
10,72 €3.216,00 €
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NCNR - Cannot be cancelled or returned.

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