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IXYT20N120C3D1HV

IGBTs DISC IGBT 1200V TO268AA

Manufacturer:

Mfr Part:
IXYT20N120C3D1HV

TTI Part:
IXYT20N120C3D1HV

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryIGBTs
TechnologySi
Package / CaseD3PAK-3 (TO-268-3)
Mounting StyleSMD/SMT
ConfigurationSingle
Collector- Emitter Voltage VCEO Max1.2 kV
Collector-Emitter Saturation Voltage3.4 V
Maximum Gate Emitter Voltage- 20 V, 20 V
Continuous Collector Current at 25 C36 A
Pd - Power Dissipation230 W
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
PackagingTube
Continuous Collector Current Ic Max88 A
Gate-Emitter Leakage Current100 nA
Moisture SensitiveYes
Product TypeIGBT Transistors
SubcategoryIGBTs

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290095
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

30In Stock

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(Minimum: 30 / Multiples: 30)
Quantity Unit PriceExt. Price
6,52 €195,60 €
6,44 €386,40 €
6,37 €764,40 €
6,21 €1.863,00 €
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NCNR - Cannot be cancelled or returned.

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