Reference Only

LSIC1MO120E0160

End of Life
SiC MOSFETs 1200 V 160 mOhm SiC Mosfet

Manufacturer:

Mfr Part:
LSIC1MO120E0160

TTI Part:
LSIC1MO120E0160

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategorySiC MOSFETs
Mounting StyleThrough Hole
Package / CaseTO-247-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage1.2 kV
Id - Continuous Drain Current22 A
Rds On - Drain-Source Resistance200 mOhms
Vgs - Gate-Source Voltage- 5 V, + 20 V
Vgs th - Gate-Source Threshold Voltage1.8 V
Qg - Gate Charge57 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation125 W
Channel ModeEnhancement
ConfigurationSingle
Fall Time14 ns
PackagingTube
Product TypeSiC MOSFETS
Rise Time8 ns
SeriesLSIC1MO
SubcategoryTransistors
TechnologySiC
Typical Turn-Off Delay Time19 ns
Typical Turn-On Delay Time12 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantRoHS Per Exemption
RoHS Per Exemption
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

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EDA / CAD Models

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