
2N3441
Bipolar Transistors - BJT MEDIUM POWER NPN TRANSIST TO66
Datasheet
2N3441 DatasheetSpecifications
| Description | Product Attribute | Similar |
|---|---|---|
| Manufacturer | TT Electronics | |
| Product Category | Bipolar Transistors - BJT | |
| Technology | Si | |
| Package / Case | TO-66-2 | |
| Transistor Polarity | NPN | |
| Configuration | Single | |
| Maximum DC Collector Current | 3 A | |
| Collector- Emitter Voltage VCEO Max | 140 V | |
| Collector- Base Voltage VCBO | 160 V | |
| Emitter- Base Voltage VEBO | 7 V | |
| Maximum DC Collector Current | 3 A | |
| Pd - Power Dissipation | 25 W | |
| Minimum Operating Temperature | - 65 C | |
| Maximum Operating Temperature | + 200 C | |
| Packaging | Bulk | |
| DC Collector/Base Gain hfe Min | 25 at 500 mA, 4 V, 5 at 2.7 A, 4 V | |
| Product Type | BJTs - Bipolar Transistors | |
| Subcategory | Transistors |
Export and Environmental Classification
| Attribute | Description |
|---|---|
| ECCN | EAR99 |
| HTS | 8541290065 |
| TARIC | 8541290000 |
| RoHS Compliant | Yes RoHS Compliant |
| RoHS Exemption Number | N/A |
| Lead(PB) in Terminals | No Lead Free |
| REACH SVHC | Yes |
| REACH Substance Name | Lead |