Reference Only

2N6796

MOSFETs MOSFET - POWER

Manufacturer:

Mfr Part:
2N6796

TTI Part:
2N6796

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerTT Electronics
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-39-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage100 V
Id - Continuous Drain Current8 A
Rds On - Drain-Source Resistance180 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage4 V
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation25 W
Channel ModeEnhancement
PackagingBulk
ConfigurationSingle
Fall Time45 ns
Product TypeMOSFETs
Rise Time75 ns
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time40 ns
Typical Turn-On Delay Time30 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantNo
RoHS Non Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsYes
Contains Lead
REACH SVHCNo
REACH Substance NameN/A

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