Reference Only

IRF610SPBF

MOSFETs N-CH SINGLE 200V TO263

Manufacturer:

Mfr Part:
IRF610SPBF

TTI Part:
IRF610SPBF

EDA / CAD Models

Alternate Part Number

SIHF610S-GE3

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseD2PAK-3 (TO-263-3)
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage200 V
Id - Continuous Drain Current3.3 A
Rds On - Drain-Source Resistance1.5 Ohms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage2 V
Qg - Gate Charge8.2 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation36 W
Channel ModeEnhancement
PackagingTube
ConfigurationSingle
Fall Time8.9 ns
Forward Transconductance - Min0.8 S
Product TypeMOSFETs
Rise Time17 ns
SeriesIRF
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time14 ns
Typical Turn-On Delay Time8.2 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantRoHS Per Exemption
RoHS Per Exemption
RoHS Exemption Number7a
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

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