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MXP120A045SL-GE3

New Product
SiC MOSFETs 1200-V N-CHANNEL SIC MOSFET

Manufacturer:

Mfr Part:
MXP120A045SL-GE3

TTI Part:
MXP120A045SL-GE3

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategorySiC MOSFETs
Mounting StyleThrough Hole
Package / CaseTO-247AD-4
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage1.2 kV
Id - Continuous Drain Current51 A
Rds On - Drain-Source Resistance56 mOhms
Vgs - Gate-Source Voltage- 10 V, 22 V
Vgs th - Gate-Source Threshold Voltage2.8 V
Qg - Gate Charge83 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation254 W
Channel ModeEnhancement
ConfigurationSingle
Fall Time10 ns
PackagingTube
Product TypeSiC MOSFETS
ProductSiC MOSFET
Rise Time17 ns
SubcategoryTransistors
TechnologySiC
Transistor Type1 N-Channel
Typical Turn-Off Delay Time26 ns
Typical Turn-On Delay Time20 ns

Export and Environmental Classification

AttributeDescription
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

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