Reference Only

SI2301CDS-T1-GE3

MOSFETs -20V Vds 8V Vgs SOT-23

Manufacturer:

Mfr Part:
SI2301CDS-T1-GE3

TTI Part:
SI2301CDS-T1-GE3

EDA / CAD Models

Alternate Part Number

SI2301CDS-T1-BE3

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseSOT-23-3
Transistor PolarityP-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage20 V
Id - Continuous Drain Current3.1 A
Rds On - Drain-Source Resistance112 mOhms
Vgs - Gate-Source Voltage- 8 V, 8 V
Vgs th - Gate-Source Threshold Voltage1 V
Qg - Gate Charge3.3 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation1.6 W
Channel ModeEnhancement
TradenameTrenchFET
PackagingReel
ConfigurationSingle
Fall Time10 ns
Product TypeMOSFETs
Rise Time35 ns
SeriesSI2
SubcategoryTransistors
Transistor Type1 P-Channel
Typical Turn-Off Delay Time30 ns
Typical Turn-On Delay Time11 ns
Part # AliasesSI2301CDS-T1-BE3 SI2301CDS-GE3

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541210000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

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Lead Time: 37 Weeks
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Quantity Unit PriceExt. Price
0,083 €249,00 €
0,081 €486,00 €
0,079 €711,00 €
0,077 €924,00 €
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