Reference Only

SI2302DDS-T1-BE3

MOSFETs N-CH SINGLE 20V TO236

Manufacturer:

Mfr Part:
SI2302DDS-T1-BE3

TTI Part:
SI2302DDS-T1-BE3

EDA / CAD Models

Alternate Part Number

SI2302DDS-T1-GE3

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseSOT-23-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage20 V
Id - Continuous Drain Current2.9 A
Rds On - Drain-Source Resistance57 mOhms
Vgs - Gate-Source Voltage- 8 V, 8 V
Vgs th - Gate-Source Threshold Voltage850 mV
Qg - Gate Charge3.5 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation860 mW
Channel ModeEnhancement
PackagingReel
ConfigurationSingle
Fall Time7 ns
Product TypeMOSFETs
Rise Time7 ns
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time30 ns
Typical Turn-On Delay Time8 ns
Part # AliasesSI2302DDS-T1-GE3

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541210095
TARIC8541290000
RoHS CompliantRoHS Per Exemption
RoHS Per Exemption
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

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Lead Time: 37 Weeks
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0,086 €258,00 €
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