Reference Only

SI2302DDS-T1-GE3

MOSFETs 20V Vds 8V Vgs SOT-23

Manufacturer:

Mfr Part:
SI2302DDS-T1-GE3

TTI Part:
SI2302DDS-T1-GE3

EDA / CAD Models

Alternate Part Number

SI2302DDS-T1-BE3

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseSOT-23-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage20 V
Id - Continuous Drain Current2.9 A
Rds On - Drain-Source Resistance57 mOhms
Vgs - Gate-Source Voltage- 8 V, 8 V
Vgs th - Gate-Source Threshold Voltage850 mV
Qg - Gate Charge3.5 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation860 mW
Channel ModeEnhancement
TradenameTrenchFET
PackagingReel
ConfigurationSingle
Fall Time7 ns
Product TypeMOSFETs
Rise Time7 ns
SeriesSI2
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time30 ns
Typical Turn-On Delay Time8 ns
Part # AliasesSI2302DDS-T1-BE3

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541210095
TARIC8541210000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

30.000In Stock

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Reel

(Minimum: 3.000 / Multiples: 3.000)
Quantity Unit PriceExt. Price
0,092 €276,00 €
0,09 €540,00 €
0,088 €792,00 €
0,086 €1.290,00 €
0,084 €2.520,00 €
0,082 €3.690,00 €
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